Features: • HIGH fT: 14 GHz TYP at 3 V, 10 mA• LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz• 6 PIN SMALL MINI MOLD PACKAGE• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCESpecifications SYMBOLS PARAMETERS UNITS RAT...
NE696M01: Features: • HIGH fT: 14 GHz TYP at 3 V, 10 mA• LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz• 6 PIN SMALL MINI MOLD PACKAGE• EXCEL...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
9 |
VCBO |
Collector to Base Voltage |
V |
6 |
VEBO |
Emitter to Base Voltage |
V |
2 |
IC |
Collector Current |
mA |
30 |
PT |
Total Power Dissipation |
mW |
150 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.