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NE67483B

Features: • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz• HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz• GATE WIDTH: WG = 280 m• GATE LENGTH: LG = 0.3 mSpecifications SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Supply Voltage V 5.0...

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NE67483B: Features: • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz• HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz• GATE WIDTH: WG = 280 m• GATE LENGTH: LG = 0.3 mSpecificati...

NE67483B Data Sheet

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Part Number:
NE67483B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz
• HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz
• GATE WIDTH: WG = 280 m
• GATE LENGTH: LG = 0.3 m


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Supply Voltage
V
5.0
VGS
Gate to Drain Voltage
V
6.0
IDS
Drain Current
A
IDSS
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +125
PT
 Total Power Dissipation NE67483B
mW
270
                                      NE67400
mW
400
Note:
1. Operation in excess of any one of these conditions may result in permanent damage.


Description

NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. NE674 is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.




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