NE72218

Noise Figure :
Mounting Style : SMD/SMT
Drain Source Voltage VDS : 5 V
Gate-Source Breakdown Voltage : - 5 V
Package / Case : SOT-343
Frequency : 12 GHz
Power Dissipation : 250 mW
Continuous Drain Current : 120 mA
Maximum Operating Temperature : + 125 C
Technology Type : MESFET
Forward Transconductance gFS (Max / Min) : 45 mS
Gain : 5 dB


Features:

• High power gain in C to X band: G_S = 4.5 dB TYP. @ f = 12 GHz
• Gate length :                               L_g = 0.8 mm
• Gate width :                               W_g = 400 mm
• 4-pin super minimold package
• Tape & reel packaging only available


Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	VDS	5.0	V
Gate to Source Voltage	VGS	-5.0	V
Drain Current	ID	IDSS	mA
Total Power Dissipation	Ptot	250	mW
Channel Temperature	Tch	125	°C
Storage Temperature	Tstg	-65 to +125	°C