DescriptionThe NE720 is a kind of low cost 1.0 recessed GaAs FET. It provides a low noise figure and high gain through 8 GHz. It is designed for consumer applications. The device is available as a chip (NE72000) and in two hermetically sealed stripline packages (NE72084 and NE72089A). The chip's g...
NE720: DescriptionThe NE720 is a kind of low cost 1.0 recessed GaAs FET. It provides a low noise figure and high gain through 8 GHz. It is designed for consumer applications. The device is available as a c...
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The NE720 is a kind of low cost 1.0 recessed GaAs FET. It provides a low noise figure and high gain through 8 GHz. It is designed for consumer applications. The device is available as a chip (NE72000) and in two hermetically sealed stripline packages (NE72084 and NE72089A). The chip's gate and channel are glassivated with a thin layer of SIO2 for mechanical protection. All bonding pads uses a Ti-Pt-Au metallization system.
There are some features of NE720 as follows: (1)low cost; (2)low noise figure: 0.8 dB at 4 GHz and 1.7 dB at 8 GHz; (3)high associated gain: 12.0 dB at 4 GHz and 9.0 dB at 8 GHz; (4)high maximum available gain: 16.0 dB at 4 GHz and 12.0 dB at 8 GHz.
The following is about the absolute maximum ratings of NE720 (TA=25): (1) VDS, drain to source voltage: 5.0 V; (2)VGDO, gain to drain voltage: -6.0 V; (3)VGSO, gate to source voltage: -6.0 V; (4)IGF, gate current: 4.0 mA; (5)IDS, drain current: 150 mA; (6)TCH, channel temperature: 175; (7)TSTG, storage temperature: -65 to +125 for NE72084 and -65 to +175 for NE72089A.