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NE721S01

Features: • HIGH POWER GAIN: 7 dB TYP at 12 GHz• HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz• LG = 0.8 mm, WG = 330 mm• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz• LOW COST PLASTIC PACKAGESpecifications SYMBOLS PARAMETERS UNITS RATING...

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SeekIC No. : 004433471 Detail

NE721S01: Features: • HIGH POWER GAIN: 7 dB TYP at 12 GHz• HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz• LG = 0.8 mm, WG = 330 mm• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = ...

NE721S01 Data Sheet

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Part Number:
NE721S01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• HIGH POWER GAIN: 7 dB TYP at 12 GHz
• HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz
• LG = 0.8 mm, WG = 330 mm
• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
• LOW COST PLASTIC PACKAGE


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

5

VCBO
Collector to Base Voltage
V
-6
VEBO
Emitter to Base Voltage
V
-6
IC
Collector Current
mA
IDSS
PT
Total Power Dissipation
mW
250
Tj
Junction Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE721S01 is a low cost 0.8 mm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications.
Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/ low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications.




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