Features: • LOW NOISE: 1.3 dB AT 2.0 GHz• LOW VOLTAGE OPERATION• EASY TO MATCH• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLESSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collec...
NE687: Features: • LOW NOISE: 1.3 dB AT 2.0 GHz• LOW VOLTAGE OPERATION• EASY TO MATCH• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOU...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
5 |
VCBO |
Collector to Base Voltage |
V |
3 |
VEBO |
Emitter to Base Voltage |
V |
2 |
IC |
Collector Current |
mA |
30 |
Tj |
Operating Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six different low cost plastic surface mount package styles.