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NE851M13

Transistors RF Bipolar Small Signal NPN

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SeekIC No. : 00218972 Detail

NE851M13: Transistors RF Bipolar Small Signal NPN

NE851M13 Data Sheet

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Part Number:
NE851M13
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single    

Description

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• NEW MINIATURE M13 PACKAGE:
   Small transistor outline
   1.0 X 0.5 X 0.5 mm
   Low profile / 0.50 mm package height
   Flat lead style for better RF performance
• IDEAL FOR 3 GHz OSCILLATORS
• LOW PHASE NOISE
• LOW PUSHING FACTOR


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

9

VCBO
Collector to Base Voltage
V
5.5
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
140
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.


Description

NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.




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