RF Amplifier CHIP GEN PUR FET
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VDS |
Drain to Supply Voltage |
V |
5 |
VGS |
Gate to Drain Voltage |
V |
-5 |
VGS |
Gate to Source Voltage |
V |
-3 |
IDS |
Drain Current |
mA |
IDSS |
PIN |
RF Input (CW) |
dBm |
+15 |
PT2 |
Total Power Dissipation |
mW |
240 |
TCH |
Channel Temperature |
°C |
175 |
TSTG |
Storage Temperature |
°C |
-65 to +175 |
The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the NE76000, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.