NE76000

RF Amplifier CHIP GEN PUR FET

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NE76000 Picture
SeekIC No. : 00613524 Detail

NE76000: RF Amplifier CHIP GEN PUR FET

floor Price/Ceiling Price

Part Number:
NE76000
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/8

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Product Details

Description

Type :
Operating Frequency :
Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Features:

• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz
• LG = 0.3 mm, WG = 280 mm
• ION IMPLANTATION



Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Supply Voltage
V
5
VGS
Gate to Drain Voltage
V
-5
VGS
Gate to Source Voltage
V
-3
IDS
Drain Current
mA
IDSS
PIN
RF Input (CW)
dBm
+15
PT2
Total Power Dissipation
mW
240
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With chip mounted on a copper heat sink.



Description

The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the NE76000, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.




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