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NE76184A

Features: • Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHzSpecificationsDrain to Source Voltage .. VDS 5.0 VGate to Source Voltage ..VGSO 5.0 VGate to Drain Voltage ...VGDO6.0 VDrain Current .......... ID 100 mATotal Power Dissipation... Ptot300 mW...

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SeekIC No. : 004433478 Detail

NE76184A: Features: • Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHzSpecificationsDrain to Source Voltage .. VDS 5.0 VGate to Source Voltage ..VGSO 5.0 VGate ...

NE76184A Data Sheet

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Part Number:
NE76184A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz


Specifications

Drain to Source Voltage .. VDS                5.0              V
Gate to Source Voltage ..VGSO             5.0              V
Gate to Drain Voltage ...VGDO             6.0              V
Drain Current .......... ID             100             mA
Total Power Dissipation... Ptot             300            mW
Channel Temperature .... Tch             150             °C
Storage Temperature ....Tstg       65 to +150      °C


Description

NE76184A is a N-channel GaAs MES FET housed in ceramic package. The NE76184A is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems.




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