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NE76038

Features: • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz• LG = 0.3 mm, WG = 280 mm• LOW COST PLASTIC PACKAGING• TAPE & REEL PACKAGING OPTION AVAILABLESpecifications SYMBOLS PARAMETERS UNITS RATINGS ...

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NE76038: Features: • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz• LG = 0.3 mm, WG = 280 mm• LOW COST PLASTIC PACKAGING• TAPE &...

NE76038 Data Sheet

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Part Number:
NE76038
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• LOW NOISE FIGURE: 1.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz
• LG = 0.3 mm, WG = 280 mm
• LOW COST PLASTIC PACKAGING
• TAPE & REEL PACKAGING OPTION AVAILABLE


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Supply Voltage
V
5
VGS
Gate to Drain Voltage
V
-5
VGS
Gate to Source Voltage
V
-3
IDS
Drain Current
mA
IDSS
PIN
RF Input (CW)
dBm
+15
PT2
Total Power Dissipation
mW
240
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
RTH2, 3
Thermal Resistance
°C/W
1250
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. RTH for plastic package mounted on glass epoxy substrate is 965°C/W.
3. RTH for chip mounted on copper heat sink is 190°C/W.


Description

NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The NE76038 is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology.

NEC's NE76038 stringent quality assurance and test procedures ensure the highest reliability and performance.




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