NE663M04

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• HIGH GAIN BANDWIDTH: fT = 15 GHz
• HIGH POWER GAIN: I_S21EI2 = 11 dB TYP at 2 GHz
• LOW NOISE FIGURE: N_F = 1.2 dB at 2 GHz
• HIGH IP3: N_F = 27 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
• LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance.


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	15
VCBO	Collector to Base Voltage	V	3.3
VEBO	Emitter to Base Voltage	V	1.5
IC	Collector Current	mA	100
PT	Total Power Dissipation	mW	190
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz it is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance.

NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE663M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.