NE664M04

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• HIGH GAIN BANDWIDTH: fT = 20 GHz
• HIGH OUTPUT POWER: P-1dB = 26 dBm at 1.8 GHz
• HIGH LINEAR GAIN: G_L = 12 dB at 1.8 GHz
• LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	13
VCBO	Collector to Base Voltage	V	5.0
VEBO	Emitter to Base Voltage	V	1.5
IC	Collector Current	mA	500
PT	Total Power Dissipation2	mW	735
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Description

NEC's NE664M04 is fabricated using NEC's state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, it is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style "M04" package