NE678M04

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 2 V
Package / Case : SOT-343
Continuous Collector Current : 0.1 A
Power Dissipation : 205 mW


Features:

• HIGH GAIN BANDWIDTH: fT = 12 GHz
• HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz
• HIGH LINEAR GAIN: G_L = 13 dB at 1.8 GHz
• NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	9.0
VCBO	Collector to Base Voltage	V	6.0
VEBO	Emitter to Base Voltage	V	2.0
IC	Collector Current	mA	100
PT	Total Power Dissipation2	mW	205
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.


Description

The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, it is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.

The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package