Features: • LOW NOISE FIGURE: < 3 dB at 500 MHz• HIGH GAIN: 15 dB at 500 MHz• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435)• SMALL COLLECTOR CAPACITANCE: 1 pF• HIGH RELIABILITY METALLIZATIONSpecifications SYMBOLS PARAMETERS UNITS RATING...
NE734: Features: • LOW NOISE FIGURE: < 3 dB at 500 MHz• HIGH GAIN: 15 dB at 500 MHz• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435)• SMALL COLLECTOR CAPACITANCE: 1 pF...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
30 |
VCBO |
Collector to Base Voltage |
V |
14 |
VEBO |
Emitter to Base Voltage |
V |
3 |
IC |
Collector Current |
mA |
50 |
Tj |
Junction Temperature |
°C |
2002 |
TSTG |
Storage Temperature |
°C |
-65 to +2003 |
The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's NE734 highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability.
TheNE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package.