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NE650R279A

Features: • High Output Power : PO (1 dB) = +23 dBm typ.• High Linear Gain : 16 dB typ.• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Ga...

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NE650R279A: Features: • High Output Power : PO (1 dB) = +23 dBm typ.• High Linear Gain : 16 dB typ.• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHzSpecifications ...

NE650R279A Data Sheet

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Part Number:
NE650R279A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power : PO (1 dB) = +23 dBm typ.
• High Linear Gain : 16 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7
V
Drain Current
ID
0.3
A
Gate Forward Current
IGF
8
mA
Gate Reverse Current
IGR
8
mA
Total Power Dissipation
PT
2.1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
65 to +150
V



Description

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. NE650R279A is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity of NE650R279A are assured by NEC's stringent quality and control procedures.




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