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NE856

Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz• LOW NOISE FIGURE: 1.1 dB at 1 GHz• HIGH COLLECTOR CURRENT: 100 mA• HIGH RELIABILITY METALLIZATION• LOW COSTSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter Voltage ...

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NE856: Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz• LOW NOISE FIGURE: 1.1 dB at 1 GHz• HIGH COLLECTOR CURRENT: 100 mA• HIGH RELIABILITY METALLIZATION• LOW COSTSpecific...

NE856 Data Sheet

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Part Number:
NE856
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
• LOW NOISE FIGURE: 1.1 dB at 1 GHz
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

20

VCBO
Collector to Base Voltage
V
12
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
100
Tj
Junction Temperature
°C
1502
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Maximum TJ for the NE85600 and NE85635 is 200°C.


Description

NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles.




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