NE71300

Mounting Style : SMD/SMT
Drain Source Voltage VDS : 5 V
Gate-Source Breakdown Voltage : - 5 V
Frequency : 12 GHz
Continuous Drain Current : 120 mA
Gain : 9.5 dB
Power Dissipation : 400 mW
Technology Type : MESFET
Maximum Operating Temperature : + 175 C
Package / Case : CHIP
Noise Figure : 1.6 dB
Forward Transconductance gFS (Max / Min) : 50 mS


Features:

• LOW NOISE FIGURE N_F = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN G_A = 9.5 dB TYP at f = 12 GHz
• L_G = 0.3 mm, W_G = 280 mm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain to Supply Voltage	V	5
VGS	Gate to Drain Voltage	V	-6
VGS	Gate to Source Voltage	V	-5
IDS	Drain Current	mA	IDSS
PIN	RF Input (CW)	dBm	45
PT2	Total Power Dissipation	mW	400
TCH	Channel Temperature	°C	175
TSTG	Storage Temperature	°C	-65 to +175

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With chip mounted on a copper heat sink.


Description

The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. NE71300 is suitable for both amplifier and oscillator applications in the consumer and industrial markets.

NEC's stringent quality assurance and test procedures of NE71300 ensure the highest reliability and performance.