NE710

The NE710 series features a low noise figure and high assoclated gain thru K-band by employing a recassed 0.3 micron gate and triple epitaxial technology.

Features of the NE710 are:(1)very high fmax:90GHz; (2)low noise figure; (3)high associated gain; (4)0.3 micron recessed gate; (5)N+ contact layer(triple epitaxial technology); (6)proven reliability and stability.

The absolute maximum ratings of the NE710 can be summarized as:(1)VDs drain to source voltage:5V; (2)VGS gate to source voltage:-6V; (3)IDS drain current:120mA ; (4)PIN RF input power:40mW; (5)TCH channel temperature:175; (6)TSTG strorage temperature:-65 to 175..

If you want to know more information about NE710 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .