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NE710

DescriptionThe NE710 series features a low noise figure and high assoclated gain thru K-band by employing a recassed 0.3 micron gate and triple epitaxial technology. Features of the NE710 are:(1)very high fmax:90GHz; (2)low noise figure; (3)high associated gain; (4)0.3 micron recessed gate; (5)N+...

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SeekIC No. : 004433468 Detail

NE710: DescriptionThe NE710 series features a low noise figure and high assoclated gain thru K-band by employing a recassed 0.3 micron gate and triple epitaxial technology. Features of the NE710 are:(1)ve...

NE710 Data Sheet

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Part Number:
NE710
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Description



Description

The NE710 series features a low noise figure and high assoclated gain thru K-band by employing a recassed 0.3 micron gate and triple epitaxial technology.

Features of the NE710 are:(1)very high fmax:90GHz; (2)low noise figure; (3)high associated gain; (4)0.3 micron recessed gate; (5)N+ contact layer(triple epitaxial technology); (6)proven reliability and stability.

The absolute maximum ratings of the NE710 can be summarized as:(1)VDs drain to source voltage:5V; (2)VGS gate to source voltage:-6V; (3)IDS drain current:120mA ; (4)PIN RF input power:40mW; (5)TCH channel temperature:175; (6)TSTG strorage temperature:-65 to 175..

If you want to know more information about NE710 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .




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