Transistors RF Bipolar Small Signal USE 551-NE681M03-A
NE681M03: Transistors RF Bipolar Small Signal USE 551-NE681M03-A
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Configuration : | Single |
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
20 |
VCBO |
Collector to Base Voltage |
V |
10 |
VEBO |
Emitter to Base Voltage |
V |
1.5 |
IC |
Collector Current |
mA |
65 |
PT |
Total Power Dissipation |
mW |
125 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
NEC's NE681M03 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/
flat lead style "M03" package is ideal for today's portable wireless applications. The NE681M03 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles.