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NE699M01

Features: • HIGH fT: 16 GHz TYP at 2 V, 20 mA• LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz• 6 PIN SMALL MINI MOLD PACKAGE• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCESpecifications SYMBOLS PARAMETERS UNITS ...

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SeekIC No. : 004433467 Detail

NE699M01: Features: • HIGH fT: 16 GHz TYP at 2 V, 20 mA• LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz• 6 PIN SMALL MINI MOLD PACKAGE• E...

NE699M01 Data Sheet

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Part Number:
NE699M01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH fT: 16 GHz TYP at 2 V, 20 mA
• LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

5

VCBO
Collector to Base Voltage
V
3
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
mW
90
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.




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