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NE76084S

Features: • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz• HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz• LG = 0.3 mm, WG = 280 mm• LOW COST METAL/CERAMIC PACKAGE• ION IMPLANTATION• AVAILABLE IN TAPE & REELSpecifications SYMBOLS PARAMETERS U...

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NE76084S: Features: • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz• HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz• LG = 0.3 mm, WG = 280 mm• LOW COST METAL/CERAMIC PACKAGE• ...

NE76084S Data Sheet

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Part Number:
NE76084S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz
• LG = 0.3 mm, WG = 280 mm
• LOW COST METAL/CERAMIC PACKAGE
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Supply Voltage
V
5
VGS
Gate to Drain Voltage
V
-5
VGS
Gate to Source Voltage
V
-3
IDS
Drain Current
mA
IDSS
PIN
RF Input (CW)
dBm
+15
PT2
Total Power Dissipation
mW
240
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.



Description

The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate and triple epitaxial technology.

NEC's NE76084S stringent quality assurance and test procedures assure the highest reliability and performance.




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