NE8560

NEC's NE8560 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process.The NE856 series is available in chip form and a Micro-x package for high frequency applications. NE8560 is also available in several low cost plastilo package styles.

Features of the NE8560 are:(1)HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz; (2)LOW NOISE FIGURE:1.1 dB at 1 GHz; (3)HIGH COLLECTOR CURRENT: 100 mA; (4)HIGH RELIABILITY METALLIZATION; (5)LOW COST.

The absolute maximum ratings of the NE8560 can be summarized as:(1)VCBO Collector to Base Voltage : 20V; (2)VCEO Collector to Emitter Voltage : 12V; (3)VEBO Emitter to Base Voltage : 3.0V; (4)IC Collector Current : 100mA; (5)TJ Junction Temperature : 1502°C; (6)TSTG Storage Temperature:  -65 to +150°C.

If you want to know more information about NE8560 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .