NE68719

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Package / Case : SOT-143
Continuous Collector Current : 0.03 A
Power Dissipation : 90 mW


Features:

• LOW NOISE: 1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCBO	Collector to Base Voltage	V	5
VCEO	Collector to Emitter Voltage	V	3
VEBO	Emitter to Base Voltage	V	2
IC	Collector Current	mA	30
Tj	Operating Junction Temperature	°C	150
Tstg	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six different low cost plastic surface mount package styles.