NE6501077

Noise Figure :
Mounting Style : SMD/SMT
Drain Source Voltage VDS : 15 V
Technology Type : MESFET
Frequency : 2.3 GHz
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 7 A
Gain : 10.5 dB
Gate-Source Breakdown Voltage : - 12 V
Forward Transconductance gFS (Max / Min) : 2.6 S
Power Dissipation : 50 W
Package / Case : Outline77


Features:

• Class A operation
• High output power: 39.5 dBm (typ)
• High gain: 10.5 dB (typ)
• High power added efficiency: 40 % (typ)
• Hermetically sealed ceramic package


Specifications

Drain to Source Voltage. V_DSX               15               V
Gate to Drain Voltage ..V_GDX              18               V
Gate to Source Voltage .V_GSX              12               V
Drain Current .........I_D               9.0               A
Gate Current.........  I_G               50              mA
Total Power Dissipation .P_T(*)              50                W
Channel Temperature .     T_ch              175              °C
Storage Temperature .. T_stg       65 to +175        °C
Temperature Cycling.... T      40 to +120       °C


Description

The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the NE6501077 has a PHS (Plated Heat Sink) structure.