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NE66719

Features: • HIGH GAIN BANDWIDTH: fT = 21 GHz• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHzSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter Voltage V 15 VCBO Collector to Base Voltage...

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NE66719: Features: • HIGH GAIN BANDWIDTH: fT = 21 GHz• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHzSpecifications SYMBOLS PARAMETERS UNITS R...

NE66719 Data Sheet

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Part Number:
NE66719
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH GAIN BANDWIDTH: fT = 21 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

15

VCBO
Collector to Base Voltage
V
3.3
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT
Total Power Dissipation2
mW
115
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy substrate.


Description

NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.


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