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NE851M03

Transistors RF Bipolar Small Signal NPN Low Volt Osc

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SeekIC No. : 00218966 Detail

NE851M03: Transistors RF Bipolar Small Signal NPN Low Volt Osc

NE851M03 Data Sheet

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Part Number:
NE851M03
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Continuous Collector Current : 0.1 A Power Dissipation : 130 mW
Package / Case : M03    

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Continuous Collector Current : 0.1 A
Package / Case : M03
Power Dissipation : 130 mW


Features:

• NEW MINIATURE M03 PACKAGE:
    Small transistor outline 
     Low profile / 0.59 mm package height
    Flat lead style for better RF performance
• IDEAL FOR 3 GHz OSCILLATORS
• LOW 1/f NOISE
• LOW PUSHING FACTOR


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

9.0

VCBO
Collector to Base Voltage
V
5.5
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
200
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy board.


Description

NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications.




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