PinoutDescriptionThe NE6870 each The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an idealchoice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE6870 die is ...
NE6870: PinoutDescriptionThe NE6870 each The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this ...
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The NE6870 each The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an idealchoice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE6870 die is available in six different low cost plastic surface mount package atyles.
Features of the NE6870 are:(1)low noise: 1.3 db at 2.0 ghz; (2)low voltage operation; (3)easy to match; (4)high gain bandwidth product: ft of 13 ghz; (5)available in six low cost plastic surface mount package styles.
The absolute maximum ratings of the NE6870 can be summarized as:(1)VCBO Collector to Base Voltage : 5V; (2)VCEO Collector to Emitter Voltage : 3V; (3)VEBO Emitter to Base Voltage :2V; (4)IC Collector Current :30mA; (5)TJ Operating Junction Temperature :150°C; (6)TSTG Storage Temperature :-65 to +150°C.
If you want to know more information about NE6870 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .