NE662M04

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
• SOT-343 footprint, with a height of just 0.59 mm
• Flat Lead Style for better RF performance


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	15
VCBO	Collector to Base Voltage	V	3.3
VEBO	Emitter to Base Voltage	V	1.5
IC	Collector Current	mA	35
PT	Total Power Dissipation	mW	115
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz, it is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance.

NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.