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NE681

Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz• LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz• HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz• LOW COSTSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter Voltage ...

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NE681: Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz• LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz• HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz• LOW COSTSpecifica...

NE681 Data Sheet

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Part Number:
NE681
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz
• HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz
• LOW COST


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

20

VCBO
Collector to Base Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
65
Tj
OperatingJunction Temperature
°C
1502
TSTG
Storage Temperature
°C
-55 to +1253
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. TJ for NE68135 and NE68100 is 200°C.
3. Maximum storage temperature for the NE68135 is -65 to +150°C.


Description

NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.




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