NE6510379A

Features: • GaAs HJ-FET Structure• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 dutyPO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty• High Linear Gain :GL = 13 dB typ. @VDS = 3.5 V, IDset...

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SeekIC No. : 004433441 Detail

NE6510379A: Features: • GaAs HJ-FET Structure• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 dutyPO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 m...

floor Price/Ceiling Price

Part Number:
NE6510379A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Description



Features:

• GaAs HJ-FET Structure
• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
                                  PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
• High Linear Gain :              GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
                                                GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
• High Power Added Efficiency:  58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
                                                   52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty



Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
8
V
Gate to Source Voltage
VGSO
4
V
Drain Current
ID
4.2
A
Gate Forward Current
IGF
38
mA
Gate Reverse Current
IGR
38
mA
Total Power Dissipation
PT
18
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
65 to +150
V



Description

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. NE6510379A is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity of NE6510379A are assured by NEC's stringent quality and control procedures.




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