Features: • GaAs HJ-FET Structure• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 dutyPO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty• High Linear Gain :GL = 13 dB typ. @VDS = 3.5 V, IDset...
NE6510379A: Features: • GaAs HJ-FET Structure• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 dutyPO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 m...
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Parameter |
Symbol |
Ratings |
Unit |
Drain to Source Voltage |
VDS |
8 |
V |
Gate to Source Voltage |
VGSO |
4 |
V |
Drain Current |
ID |
4.2 |
A |
Gate Forward Current |
IGF |
38 |
mA |
Gate Reverse Current |
IGR |
38 |
mA |
Total Power Dissipation |
PT |
18 |
W |
Channel Temperature |
Tch |
150 |
°C |
Storage Temperature |
Tstg |
65 to +150 |
V |
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. NE6510379A is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.
Reliability and performance uniformity of NE6510379A are assured by NEC's stringent quality and control procedures.