Features: • NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height Flat lead style for better RF performance• HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz• LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz• HIGH COLLECTOR CURRENT: IC M...
NE688M13: Features: • NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height Flat lead style for better RF performance• HIGH GAIN BANDWIDTH PRO...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
9 |
VCBO |
Collector to Base Voltage |
V |
6 |
VEBO |
Emitter to Base Voltage |
V |
2 |
IC |
Collector Current |
mA |
100 |
PT |
Total Power Dissipation |
mW |
140 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688M13 is also available in chip and six different low cost plastic surface mount package styles.