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NE688

Features: ·LOW PHASE NOISE DISTORTION·LOW NOISE: 1.5 dB at 2.0 GHz·LOW VOLTAGE OPERATION·LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA·AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES·ALSO AVAILABLE IN CHIP FORMSpecifications SYMBOLS PARAMETERS UNITS RATIN...

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NE688: Features: ·LOW PHASE NOISE DISTORTION·LOW NOISE: 1.5 dB at 2.0 GHz·LOW VOLTAGE OPERATION·LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA·AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PAC...

NE688 Data Sheet

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Part Number:
NE688
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·LOW PHASE NOISE DISTORTION
·LOW NOISE: 1.5 dB at 2.0 GHz
·LOW VOLTAGE OPERATION
·LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA
·AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES
·ALSO AVAILABLE IN CHIP FORM


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
9
VCBO
Collector to Base Voltage
V
6
VEBO
Emitter to Base Voltage
V
2.0
IC
Collector Current
mA
100
Tj
Operating Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. Its low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form.




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