NE685M13

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• NEW MINIATURE M13 PACKAGE:
Small transistor outline
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT: f_T = 12 GHz
• LOW NOISE FIGURE: N_F = 1.5 dB at 2 GHz


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	9.0
VCBO	Collector to Base Voltage	V	6.0
VEBO	Emitter to Base Voltage	V	2.0
IC	Collector Current	mA	30
PT	Total Power Dissipation	mW	140
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE685M13 is also available in six different low cost plastic surface mount package styles.