NE68939

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, V_CE = 3.6 V, Class AB, Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE68939


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	9.0
VCBO	Collector to Base Voltage	V	6.0
VEBO	Emitter to Base Voltage	V	2.0
IC	Collector Current	150
PT	Total Power Dissipation	mW	200 (CW)
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The NE68939 is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel.

The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.