NE650103M

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Gain : 11 dB
Drain Source Voltage VDS : 15 V
Technology Type : MESFET
Frequency : 2.3 GHz
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 7 A
Power Dissipation : 33 W
Package / Case : 3M
Gate-Source Breakdown Voltage : - 18 V


Features:

• LOW COST PLASTIC PACKAGE
• USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA
• HIGH OUTPUT POWER: 40 dBm TYP
• HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz
• LOW THERMAL RESISTANCE: 4.0° C/W
• LEAD-FREE


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain to Supply Voltage	V	15
VGS	Gate to Drain Voltage	V	-18
VGS	Gate to Source Voltage	V	-7.0
IDS	Drain Current	A	5
IGF	Gate Current	mA	45
PT	Total Power Dissipation	W	33
TCH	Channel Temperature	°C	175
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. NE650103M is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures