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NESG3031M14

Features: • LOW NOISE FIGURE AND HIGH-GAIN NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz• MAXIMUM STABLE POWER GAIN: MSG= 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz• SiGe HBT TECHNOLOG...

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NESG3031M14: Features: • LOW NOISE FIGURE AND HIGH-GAIN NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz• MAXIMU...

NESG3031M14 Data Sheet

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Part Number:
NESG3031M14
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• LOW NOISE FIGURE AND HIGH-GAIN
   NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
   NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN: MSG= 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz
• M14 PACKAGE: 4-pin lead-less minimold package


Specifications

Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IG
35
mA
Total Power Dissipation
PtotNote
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm, (t) glass epoxy PCB


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