NDS8928

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.035 Ohms
Continuous Drain Current : 5.5 A, - 3.8 A


Features:

`N-Channel 5.5A, 20V, R<sub>DS(ON)</sub>=0.035 @ V<sub>GS</sub>=4.5V R<sub>DS(ON)</sub>=0.045 @ V<sub>GS</sub>=2.7V
`P-Channel -3.8A, -20V, R_DS(ON)=0.07 @ V_GS=-4.5V R_DS(ON)=0.1 @ V_GS=-2.7V.
`High density cell design for extremely low R<sub>DS(ON).</sub>
`High power and current handling capability in a widely used surface mount package.
`Dual (N & P-Channel) MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 8 5.5 20	-20 -8 -3.8 -15	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Dual Operation		2 1.6 1 0.9 -55 to 150
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

°C/W °C/W