Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Drain-Source Breakdown Voltage
: 50 V
Resistance Drain-Source RDS (on)
: 0.3 Ohms
Continuous Drain Current
: +/- 2 A
Features: `2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDS9956A |
Units |
| VDSS |
Drain-Source Voltage |
50 |
V |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| ID |
Drain Current - Continuous @ TA = 25(Note 1a)
- Continuous @ TA = 70 (Note 1a)
- Pulsed @ TA = 25 |
± 2.0 |
A |
| ± 1.6 |
| ± 8 |
| PD |
Power Dissipation for Dual Operation |
2 |
W |
|
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
| 1 |
| 0.9 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
78 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
40 |
/W |
DescriptionThese N-Channel enhancement mode power field effect transistors NDS9959 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9959 is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9959 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9959
NDS9959
NDS9959TR ND
NDS9959TRND
NDS9959TR
|
NDS9959 Data Sheet
