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NE27200

Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length: Lg = 0.2 m• Gate Width : Wg = 200 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID ...

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SeekIC No. : 004433319 Detail

NE27200: Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length: Lg = 0.2 m• Gate Width : Wg = 200 mSpecifications ...

NE27200 Data Sheet

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Part Number:
NE27200
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length: Lg = 0.2 m
• Gate Width : Wg = 200 m


Specifications

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS 3.0 V
Drain Current ID IDSS mA
Total Power Dissipation Ptot* 200 mW
Channel Temperature Tch 175
Storage Temperature Tstg 65 to +175
* Chip mounted on a Alumina heatsink (size: 3*3 * 0.6t)



Description

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. NE27200's excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.




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