NDS9410S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

`7.0 A, 30 V. R<sub>DS(ON)</sub> = 0.03  @ V<sub>GS</sub> = 10 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter	NDS9410S	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	7	A
		25
PD	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ,TSTG	Operating and Storage Temperature Range	-55 to 150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	20	/W

Description

SO-8 N-Channel enhancement mode power field effect transistors NDS9410S are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS9410S is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.