Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: 5 A
Resistance Drain-Source RDS (on)
: 0.05 Ohms
Features: ·5A, 30V. RDS(ON) = 0.05W @ VGS = 10V.
·High density cell design for extremely low RDS(ON).
·High power and current handling capability in a widely used surface mount package.
·Dual MOSFET in surface mount package.Pinout
Specifications
|
Symbol |
Parameter |
NDS9936 |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
30
± 20
± 5.0
± 4.0
± 40
2
1.6
1
0.9
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current - Continuous @ TA = 25°C
- Continuous @ TA = 70°C
- Pulsed @ TA = 25°C |
(Note 1a)
(Note 1a) |
|
PD |
Power Dissipation for Dual Operation
Power Dissipation for Single Operation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
40 |
°C/W
°C/W |
DescriptionThese N-Channel enhancement mode power field effect transistors NDS9936 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS9936 is particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9936 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 525pF @ 15V |
| Power - Max | 900mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9936
NDS9936
NDS9936DKR ND
NDS9936DKRND
NDS9936DKR
|
NDS9936 Data Sheet
