NDS352P

MOSFET SSOT-3 P-CH 20V

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SeekIC No. : 00161402 Detail

NDS352P: MOSFET SSOT-3 P-CH 20V

floor Price/Ceiling Price

Part Number:
NDS352P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : +/- 0.85 A
Resistance Drain-Source RDS (on) : 0.46 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-3 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.46 Ohms
Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SSOT-3
Continuous Drain Current : +/- 0.85 A


Features:

·-0.85A, -20V. RDS(ON) = 0.5W @ VGS = -4.5V.
·Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.
·Compact industry standard SOT-23 surface mount package.



Specifications

Symbol
Parameter
NDS8410
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
±0.85
±10
0.5
0.46
-55 to 150
V
V
A

W

°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

These P-Channel logic level enhancement mode power field effect transistors NDS352P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS352P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDS352P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C850mA
Rds On (Max) @ Id, Vgs350 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 125pF @ 10V
Power - Max460mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs4nC @ 5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS352P
NDS352P
NDS352PCT ND
NDS352PCTND
NDS352PCT



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