NDS331N

MOSFET N-Ch LL FET Enhancement Mode

product image

NDS331N Picture
SeekIC No. : 00148083 Detail

NDS331N: MOSFET N-Ch LL FET Enhancement Mode

floor Price/Ceiling Price

US $ .1~.31 / Piece | Get Latest Price
Part Number:
NDS331N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.31
  • $.22
  • $.14
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.21 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V
Package / Case : SuperSOT
Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.21 Ohms


Features:

`1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V
                     RDS(ON) = 0.16 @ VGS= 4.5 V.
`Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermaland electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS331N Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage - Continuous 8 V
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
1.3 A
10
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
0.5 W
0.46
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
250 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 75 /W



Description

These N-Channel logic level enhancement mode power field effect transistors NDS331N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS331N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDS331N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs160 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 162pF @ 10V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs5nC @ 4.5V
Package / CaseSuperSOT?-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS331N
NDS331N
NDS331NDKR ND
NDS331NDKRND
NDS331NDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Resistors
Computers, Office - Components, Accessories
RF and RFID
Cables, Wires - Management
Prototyping Products
DE1
Boxes, Enclosures, Racks
View more