Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP, Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length : Lg d 0.2 m• Gate Width . : Wg = 200 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID...
NE32584C: Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP, Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length : Lg d 0.2 m• Gate Width . : Wg = 200 mSpecifications ...
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Drain to Source Voltage | VDS | 4.0 | V |
Gate to Source Voltage | VGS | 3.0 | V |
Drain Current | ID | IDSS | mA |
Gate Current | IG | 100 | A |
Total Power Dissipation | Ptot | 165 | mW |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 65 to +150 |
The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.