NDS7002A

MOSFET SOT-23 N-CH ENHANCE

product image

NDS7002A Picture
SeekIC No. : 00146849 Detail

NDS7002A: MOSFET SOT-23 N-CH ENHANCE

floor Price/Ceiling Price

US $ .07~.17 / Piece | Get Latest Price
Part Number:
NDS7002A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.17
  • $.14
  • $.1
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capability.



Specifications

Symbol Parameter 2N7000 2N7002 NDS7002A Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS  1 M) 60 V
VGSS Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50s)
±20 V
±40
ID Maximum Drain Current - Continuous
- Pulsed
200 115 280 mA
500 800 1500
PD Maximum Power Dissipation
Derated above 25
400 200 300 mW
3.2 1.6 2.4 mW/
TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150
TL Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 /W



Description

These N-Channel enhancement mode field effect transistors NDS7002A are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. NDS7002A is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.




Parameters:

Technical/Catalog InformationNDS7002A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C280mA
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max300mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS7002A
NDS7002A
NDS7002ADKR ND
NDS7002ADKRND
NDS7002ADKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Resistors
Isolators
Potentiometers, Variable Resistors
Crystals and Oscillators
Test Equipment
Audio Products
View more