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NE24283B

Features: • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz• HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz• GATE LENGTH: 0.25 m• GATE WIDTH: 200 m• HERMETIC METAL/CERAMIC PACKAGESpecifications SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 ...

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NE24283B: Features: • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz• HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz• GATE LENGTH: 0.25 m• GATE WIDTH: 200 m• HERMETIC METAL/CERAMIC PAC...

NE24283B Data Sheet

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Part Number:
NE24283B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• VERY LOW NOISE FIGURE:
  0.6 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
  11.0 dB TYP at 12 GHz
• GATE LENGTH: 0.25 m
• GATE WIDTH: 200 m
• HERMETIC METAL/CERAMIC PACKAGE


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGSO Gate to Source Voltage V 3.0
IDS Drain Current mA IDSS
IGRF Gate Current A 100
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
PT Total Power Dissipation mW 165

Note:
1. Operation in excess of any one of these conditions may result in permanent damage.


Description

The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The NE24283B features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.

NEC's NE24283B stringent quality assurance and test procedures assure the highest reliability and performance.




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