Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: 3.5 A
Resistance Drain-Source RDS (on)
: 0.1 Ohms
Features: `N-Channel 3.5A, 20V, RDS(ON) = 0.1 @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1 @ VGS = -10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual (N & P-Channel) MOSFET in surface mount package.Pinout
Specifications
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
20
± 20
± 3.5
± 2.8
± 14 |
-20
± 20
± 3.5
± 2.8
± 14 |
V
V
A
W
°C |
|
ID |
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed TA = 25°C |
(Note 1a)
(Note 1a) |
|
PD |
Power Dissipation for Dual Operation |
2
1.6
1
0.9
-55 to 150 |
| Power Dissipation for Single Operation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note |
DescriptionThese dual N- and P-Channel enhancement mode power field effect transistors NDS9958 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9958 is particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS9958 Data Sheet
