Gate-Source Breakdown Voltage
: +/- 20 V
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Configuration
: Dual Dual Drain
Drain-Source Breakdown Voltage
: - 60 V
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: 2.3 A
Resistance Drain-Source RDS (on)
: 138 m Ohms
Features: `-2.3A, -60V. RDS(ON) = 0.25 @ VGS = -10V.
`High density cell design for low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDS9948 |
Units |
| VDSS |
Drain-Source Voltage |
-60 |
V |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| ID |
Drain Current - Continuous TA = 25 (Note 1a)
- Continuous TA = 70 (Note 1a)
- Pulsed TA = 25 |
± 2.3 |
A |
| ± 10 |
| ± 1.8 |
| PD |
Power Dissipation for Dual Operation |
2 |
|
|
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
W |
| 1 |
| 0.9 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
78 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
40 |
/W |
DescriptionThese P-Channel enhancement mode power field effect transistors NDS9948 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9948 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9948 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 2.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 394pF @ 30V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9948
NDS9948
NDS9948TR ND
NDS9948TRND
NDS9948TR
|
NDS9948 Data Sheet
