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NE021

Features: • HIGH INSERTION GAIN: 18.5 dB at 500 MHz• LOW NOISE FIGURE: 1.5 dB at 500 MHz• HIGH POWER GAIN: 12 dB at 2 GHz• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain CompressionApplicationThese NEC products are not intended for use in life support devices, appliances, ...

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SeekIC No. : 004433301 Detail

NE021: Features: • HIGH INSERTION GAIN: 18.5 dB at 500 MHz• LOW NOISE FIGURE: 1.5 dB at 500 MHz• HIGH POWER GAIN: 12 dB at 2 GHz• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Com...

NE021 Data Sheet

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Part Number:
NE021
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


Application

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.




Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 25
VCEO Collector to Emitter Voltage V 122
VEBO Emitter to Base Voltage V 3
IC Collector Current mA 70
TJ Junction Temperature 2003
TSTG Storage Temperature -65 to +2004

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Typical BVCER = 25 V for R 300 .
3. Maximum TJ for the NE02133 and NE02139 is +150.
4. Maximum storage temperature for the NE02135 is -65 to+150. Maximum storage temperature for the NE02133 and NE02139 is -55 to 150.


Description

NEC`s NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications




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