NDT452AP

MOSFET P-Channel FET Enhancement Mode

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SeekIC No. : 00146719 Detail

NDT452AP: MOSFET P-Channel FET Enhancement Mode

floor Price/Ceiling Price

US $ .35~.6 / Piece | Get Latest Price
Part Number:
NDT452AP
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.065 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.065 Ohms
Package / Case : SOT-223
Continuous Drain Current : 5 A
Configuration : Single Dual Drain


Features:

`-5A, -30V. RDS(ON) = 0.065 @ VGS = -10V
                     RDS(ON) = 0.1 @ VGS = -4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT452AP Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-5 A
-15
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT P-Channel enhancement mode power field effect transistors NDT452AP are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.




Parameters:

Technical/Catalog InformationNDT452AP
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs65 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 15V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSOT-223-4
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT452AP
NDT452AP
NDT452APDKR ND
NDT452APDKRND
NDT452APDKR



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